DIFFUSIVE TRANSPORT IN MONOLAYER MOLYBDENUM DISULFIDE (MoS2) UNDER STRAIN
While silicon-based transistors approach their physical limit and naturally scaled-down 2D graphene layers have low ON/OFF current ratio due to zero bandgap, monolayer 2D molybdenum disulphide (MoS2) holds promise as channel material for future field-effect transistors (FETs) with a finite non-zero...
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OpenSIUC
2019
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| Online Access: | https://opensiuc.lib.siu.edu/dissertations/1665 https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=2669&context=dissertations |