EFFECTS OF STRUCTURAL MODIFICATION ON RELIABILITY OF NANOSCALE NITRIDE HEMTs
AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies...
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OpenSIUC
2014
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| Online Access: | https://opensiuc.lib.siu.edu/dissertations/890 https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=1893&context=dissertations |