Finite element analysis of thermal stresses in semiconductor devices
The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Ma...
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1990
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ndltd-pdx.edu-oai-pdxscholar.library.pdx.edu-open_access_etds-52252019-10-20T04:57:32Z Finite element analysis of thermal stresses in semiconductor devices Duerr, Joachim Karl Wilhelm The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion. 1990-01-01T08:00:00Z text application/pdf https://pdxscholar.library.pdx.edu/open_access_etds/4215 https://pdxscholar.library.pdx.edu/cgi/viewcontent.cgi?article=5225&context=open_access_etds Dissertations and Theses PDXScholar Semiconductors -- Thermal properties Thermal stresses Mechanical Engineering |
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Others
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NDLTD |
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Semiconductors -- Thermal properties Thermal stresses Mechanical Engineering |
| spellingShingle |
Semiconductors -- Thermal properties Thermal stresses Mechanical Engineering Duerr, Joachim Karl Wilhelm Finite element analysis of thermal stresses in semiconductor devices |
| description |
The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion. |
| author |
Duerr, Joachim Karl Wilhelm |
| author_facet |
Duerr, Joachim Karl Wilhelm |
| author_sort |
Duerr, Joachim Karl Wilhelm |
| title |
Finite element analysis of thermal stresses in semiconductor devices |
| title_short |
Finite element analysis of thermal stresses in semiconductor devices |
| title_full |
Finite element analysis of thermal stresses in semiconductor devices |
| title_fullStr |
Finite element analysis of thermal stresses in semiconductor devices |
| title_full_unstemmed |
Finite element analysis of thermal stresses in semiconductor devices |
| title_sort |
finite element analysis of thermal stresses in semiconductor devices |
| publisher |
PDXScholar |
| publishDate |
1990 |
| url |
https://pdxscholar.library.pdx.edu/open_access_etds/4215 https://pdxscholar.library.pdx.edu/cgi/viewcontent.cgi?article=5225&context=open_access_etds |
| work_keys_str_mv |
AT duerrjoachimkarlwilhelm finiteelementanalysisofthermalstressesinsemiconductordevices |
| _version_ |
1719272125857005568 |