Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření

CdTe semiconductor is a good material for the construction of X-ray and gamma ray detectors. Its physical properties are strongly influenced by an existence of deep levels in the forbidden band. This thesis deals with an influence of deep levels to the photoelectric transport in high resistivity CdT...

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Main Author:	Dědič, Václav
Other Authors:	Šikula, Josef
Format:	Dissertation
Language:	Czech
Published:	2009
Online Access:	http://www.nusl.cz/ntk/nusl-277555

id	ndltd-nusl.cz-oai-invenio.nusl.cz-277555
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spelling	ndltd-nusl.cz-oai-invenio.nusl.cz-2775552017-06-27T04:40:03Z Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření Photoelectric transport in high resistivity CdTe for gamma ray detectors Šikula, Josef Dědič, Václav Franc, Jan CdTe semiconductor is a good material for the construction of X-ray and gamma ray detectors. Its physical properties are strongly influenced by an existence of deep levels in the forbidden band. This thesis deals with an influence of deep levels to the photoelectric transport in high resistivity CdTe. Experimental part of this thesis consits of measurement of slopes of Lux-Ampere characteristics of variously doped CdTe samples depended on voltage and energy of excitation. Gradients of measured guidelines of Lux-Ampere characteristics show strong dependency on an electric charge accumulated on deep levels. This thesis also contains numerical models of photoconductivity for various parameters of material. 2009 info:eu-repo/semantics/masterThesis http://www.nusl.cz/ntk/nusl-277555 cze info:eu-repo/semantics/restrictedAccess
collection	NDLTD
language	Czech
format	Dissertation
sources	NDLTD
description	CdTe semiconductor is a good material for the construction of X-ray and gamma ray detectors. Its physical properties are strongly influenced by an existence of deep levels in the forbidden band. This thesis deals with an influence of deep levels to the photoelectric transport in high resistivity CdTe. Experimental part of this thesis consits of measurement of slopes of Lux-Ampere characteristics of variously doped CdTe samples depended on voltage and energy of excitation. Gradients of measured guidelines of Lux-Ampere characteristics show strong dependency on an electric charge accumulated on deep levels. This thesis also contains numerical models of photoconductivity for various parameters of material.
author2	Šikula, Josef
author_facet	Šikula, Josef Dědič, Václav
author	Dědič, Václav
spellingShingle	Dědič, Václav Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření
author_sort	Dědič, Václav
title	Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření
title_short	Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření
title_full	Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření
title_fullStr	Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření
title_full_unstemmed	Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření
title_sort	fotoelektrický transport ve vysokoodporovém cdte pro detektory rentgenova záření
publishDate	2009
url	http://www.nusl.cz/ntk/nusl-277555
work_keys_str_mv	AT dedicvaclav fotoelektrickytransportvevysokoodporovemcdteprodetektoryrentgenovazareni AT dedicvaclav photoelectrictransportinhighresistivitycdteforgammaraydetectors
_version_	1718468364460883968

Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření

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