Fotoelektrický transport ve vysokoodporovém CdTe pro detektory rentgenova záření
CdTe semiconductor is a good material for the construction of X-ray and gamma ray detectors. Its physical properties are strongly influenced by an existence of deep levels in the forbidden band. This thesis deals with an influence of deep levels to the photoelectric transport in high resistivity CdT...
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| Format: | Dissertation |
| Language: | Czech |
| Published: |
2009
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| Online Access: | http://www.nusl.cz/ntk/nusl-277555 |