Design and fabrication of a gallium arsenide composite operational amplifier
Silicon (Si) processes remain the dominant technology in integrated circuit (IC) design, but gallium arsenide (GaAs) is gaining ground. Gallium arsenide's electron mobility is five times greater than Si, so GaGs circuits are faster and have a greater rang
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Language: | en_US |
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Monterey, California. Naval Postgraduate School
2012
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Online Access: | http://hdl.handle.net/10945/7498 |