2-D modeling of GaN HEMTs incorporating the piezoelectric effect
Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are microwave power devices that promise to revolutionize the capability of Navy radar systems. The Office of Naval Research is currently finding basic research of developing microwave power amplifiers for use in future radar systems....
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Monterey, California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/2751 |