Modeling low temperature C-V profiling in blocked impurity band detectors
Silicon Blocked Impurity Band (BIB) detectors are state-of-the-art devices to detect light in the near to mid infrared range (5-40 æm). Numerical modeling of BIB detectors is performed using a four-region finite difference approach to study the role of space charge in C-V (capacitance-voltage) prof...
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Monterey California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/2102 |