The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon

The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon

Silicon carbide (SiC) is used as the main diffusion barrier to prevent the fission products (FPs) from escaping in high temperature reactors (HTRs). It retains most of the FPs quite effectively with the exception of silver, strontium and europium. There have also been reports on the reactions betwee...

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Bibliographic Details
Main Author: Thabethe, Thabsile Theodora
Other Authors: Malherbe, Johan B.
Language:en
Published: University of Pretoria 2018
Subjects:
UCTD
Online Access:http://hdl.handle.net/2263/65018
Thabethe, TT 2017, The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon, PhD Thesis, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/65018>

Internet

http://hdl.handle.net/2263/65018
Thabethe, TT 2017, The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon, PhD Thesis, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/65018>

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