Electrical characterization of process induced defects in germanium

The origins and identity of process induced defects in semiconductors has proven to be a particularly difficult problem to solve. Germanium, a semiconductor once again at the forefront of device technology, has played a leading role in advancing semiconductor physics and now, through the use of r...

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Bibliographic Details
Main Author: Coelho, Sergio M.M.
Other Authors: Auret, F.D. (Francois Danie)
Language:en
Published: University of Pretoria 2015
Subjects:
Online Access:http://hdl.handle.net/2263/46046
Coelho, SM 2014, Electrical characterization of process induced defects in germanium, PhD Thesis, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/46046>