Electrical characterization of process induced defects in germanium
The origins and identity of process induced defects in semiconductors has proven to be a particularly difficult problem to solve. Germanium, a semiconductor once again at the forefront of device technology, has played a leading role in advancing semiconductor physics and now, through the use of r...
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Language: | en |
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University of Pretoria
2015
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Online Access: | http://hdl.handle.net/2263/46046 Coelho, SM 2014, Electrical characterization of process induced defects in germanium, PhD Thesis, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/46046> |