The characterization of bulk as-grown and annealed ZnO by the Hall effect
A fully automated Temperature Dependent Hall (TDH) measurement setup has been assembled for the purposes of this study. This TDH setup is capable of measuring samples in the 20 K to 370 K temperature range. Sample sizes of up to 20 mm × 20 mm can be accommodated by the custom designed and manufactur...
Main Author: | Kassier, Gunter Horst |
---|---|
Other Authors: | Prof F D Auret |
Published: |
2013
|
Subjects: | |
Online Access: | http://hdl.handle.net/2263/26646 Kassier, GH 2007, The characterization of bulk as-grown and annealed ZnO by the Hall effect, MSc Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/26646> http://upetd.up.ac.za/thesis/available/etd-07252007-145838/ |
Similar Items
-
Phonon and Carrier Transport in Semiconductors from First Principles:
by: Protik, Nakib Haider
Published: (2019) -
ZnO nanostructures with tunable visible luminescence: Effects of kinetics of chemical reduction and annealing
by: R. Raji, et al.
Published: (2017-03-01) -
BODIPY dyads and triads: synthesis, optical, electrochemical and transistor properties
by: Sompit Wanwong, et al.
Published: (2018-05-01) -
Design And Synthesis Of Donor-Acceptor (D-A) Organic Semiconductors : Applications In Field Effect Transistors And Photovoltaics
by: Dutta, Gitish Kishor
Published: (2015) -
Electrical characterization of ZnO and metal ZnO contacts
by: Mtangi, Wilbert
Published: (2013)