The characterization of bulk as-grown and annealed ZnO by the Hall effect

The characterization of bulk as-grown and annealed ZnO by the Hall effect

A fully automated Temperature Dependent Hall (TDH) measurement setup has been assembled for the purposes of this study. This TDH setup is capable of measuring samples in the 20 K to 370 K temperature range. Sample sizes of up to 20 mm × 20 mm can be accommodated by the custom designed and manufactur...

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Bibliographic Details
Main Author: Kassier, Gunter Horst
Other Authors: Prof F D Auret
Published: 2013
Subjects:
Carrier concentration
Electron transport
Boltzmann transport equation
Mobility
Nonlinear regression
Zinc oxide
Hall effect
Electrically active defects
Surface conduction
Semiconductor statistics
Acceptors
Donors
UCTD
Online Access:http://hdl.handle.net/2263/26646
Kassier, GH 2007, The characterization of bulk as-grown and annealed ZnO by the Hall effect, MSc Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/26646>
http://upetd.up.ac.za/thesis/available/etd-07252007-145838/

Internet

http://hdl.handle.net/2263/26646
Kassier, GH 2007, The characterization of bulk as-grown and annealed ZnO by the Hall effect, MSc Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/26646>
http://upetd.up.ac.za/thesis/available/etd-07252007-145838/

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