Digital DLTS studies on radiation induced defects in Si, GaAs and GaN

Digital DLTS studies on radiation induced defects in Si, GaAs and GaN

Since the development of deep level transient spectroscopy (DLTS) in the 1970’s by Lang and others, the technique has become a powerful analytical tool to characterise the electrical properties of defects in semiconductors. With the development of more powerful computers and improved data acquisitio...

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Bibliographic Details
Main Author: Meyer, W.E. (Walter Ernst)
Other Authors: Goodman, S.A. (Stewart Alexander)
Published: 2013
Subjects:
Radiation
Defects in si
Induced
Gaas
Gan
Digital dlts studies
UCTD
Online Access:http://hdl.handle.net/2263/25602
Meyer, W 2007, Digital DLTS studies on radiation induced defects in Si, GaAs and GaN, PhD thesis, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/25602 >
http://upetd.up.ac.za/thesis/available/etd-06182007-143820/

Internet

http://hdl.handle.net/2263/25602
Meyer, W 2007, Digital DLTS studies on radiation induced defects in Si, GaAs and GaN, PhD thesis, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/25602 >
http://upetd.up.ac.za/thesis/available/etd-06182007-143820/

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