A study of plasma source ion implantation.
The work described in this thesis is an analysis of the Plasma Source Ion Implantation (PSII) process. A metal target is placed within a plasma, and pulsed to a high negative potential (10 - 50 kV). The electrons in the plasma close to the target are then repelled very rapidly, leaving an area of un...
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| Language: | en |
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2012
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| Online Access: | http://hdl.handle.net/10413/5068 |