Injection-Avalanche-Based nþpn Silicon Complementary Metal Oxide–Semiconductor Light-Emitting Device (450 – 750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity
In this paper, we report on an increase in emission intensity of up to 10 nW/mm2 that has been realized with a new novel two junction, diagonal avalanche control, and minority carrier injection silicon complementary metal–oxide–semiconductor (CMOS) light emitting device (LED). The device utilizes a...
| Main Authors: | , , |
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| Format: | Others |
| Language: | en |
| Published: |
Japanese Journal of Applied Physics
2007
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| Subjects: | |
| Online Access: | http://encore.tut.ac.za/iii/cpro/DigitalItemViewPage.external?sp=1000813 |