Scanning probe force microscopy of III-V semiconductor structures
In this dissertation, cross-sectional potential imaging of GaAs-based homoepitaxial, heteroepitaxial and quantum well structures, all grown by atmospheric pressure Metal-organic Vapor Phase Epitaxy (MOVPE) is investigated. Kelvin probe force microscopy (KPFM), using amplitude modulation (AM) and fre...
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| Format: | Others |
| Language: | English |
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Nelson Mandela University
2017
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| Online Access: | http://hdl.handle.net/10948/13992 |