On the growth and characterisation of AIGaN alloys for optoelectronic applications
In this study the growth and characterisation of undoped and Si-doped AlxGa1-xN has been performed. The layers were grown using low-pressure metalorganic vapour phase deposition (MOCVD) on sapphire substrates. The optical and electrical properties of the AlxGa1-xN layers were studied using variable...
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| Format: | Others |
| Language: | English |
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Nelson Mandela Metropolitan University
2005
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| Online Access: | http://hdl.handle.net/10948/8824 |