Raman spectroscopy of ternary III-V semiconducting films
The III-V semiconductor compounds (i.e. In Ga As x 1-x , 1 x x InAs Sb - , In Ga Sb x 1-x and Al Ga As x 1-x ) have been studied using room temperature Raman spectroscopy. X-ray diffraction has been used as a complementary characterization technique. In this study all the III-V semiconductor compoun...
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| Format: | Others |
| Language: | English |
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Nelson Mandela Metropolitan University
2009
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| Online Access: | http://hdl.handle.net/10948/1011 |