Wide Band-Gap Semiconductor Based Power Converter Reliability and Topology Investigation
Wide band-gap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) have been widely investigated these years for their preferred operation at higher switching frequency, higher blocking voltage, higher temperature, with a compacter volume, in comparison with the traditiona...
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| Format: | Others |
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North Dakota State University
2021
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| Online Access: | https://hdl.handle.net/10365/31935 |