Deep-Ultraviolet Optoelectronic Devices Enabled by the Hybrid Integration of Next-Generation Semiconductors and Emerging Device Platforms

Deep-Ultraviolet Optoelectronic Devices Enabled by the Hybrid Integration of Next-Generation Semiconductors and Emerging Device Platforms

In this dissertation, the design and fabrication of deep-ultraviolet photodetectors were investigated based on gallium oxide and its alloys, through the heterogeneous integration with metallic and other inorganic materials. The crystallographic properties of oxide films grown directly and indirectly...

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Bibliographic Details
Main Author: Alfaraj, Nasir
Other Authors: Ooi, Boon S.
Language:en
Published: 2021
Subjects:
deep ultraviolet
optoelectronics
photodetectors
oxide semiconductors
metal nitrides
Online Access:Alfaraj, N. (2019). Deep-Ultraviolet Optoelectronic Devices Enabled by the Hybrid Integration of Next-Generation Semiconductors and Emerging Device Platforms. KAUST Research Repository. https://doi.org/10.25781/KAUST-0144P
http://hdl.handle.net/10754/660186

Internet

Alfaraj, N. (2019). Deep-Ultraviolet Optoelectronic Devices Enabled by the Hybrid Integration of Next-Generation Semiconductors and Emerging Device Platforms. KAUST Research Repository. https://doi.org/10.25781/KAUST-0144P
http://hdl.handle.net/10754/660186

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