Quantifying the Ionized Dopant Concentrations of InGaN-based Nanowires for Enhanced Photoelectrochemical Water Splitting Performance

Quantifying the Ionized Dopant Concentrations of InGaN-based Nanowires for Enhanced Photoelectrochemical Water Splitting Performance

III-nitride nanowires (NWs) have been recognized as efficient photoelectrochemical (PEC) devices due to their large surface-to-volume ratio, tunable bandgap, and chemical stability. Doping engineering can help to enhance the PEC performance further. Therefore, addressing the effects of Si and Mg dop...

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Bibliographic Details
Main Author: Zhang, Huafan
Other Authors: Ooi, Boon S.
Language:en
Published: 2018
Subjects:
photoelectrochemical
III-nitride
nanowires
Mott-Schottky measurements
solar hydrogen generation
Online Access:Zhang, H. (2018). Quantifying the Ionized Dopant Concentrations of InGaN-based Nanowires for Enhanced Photoelectrochemical Water Splitting Performance. KAUST Research Repository. https://doi.org/10.25781/KAUST-07PQX
http://hdl.handle.net/10754/629521

Internet

Zhang, H. (2018). Quantifying the Ionized Dopant Concentrations of InGaN-based Nanowires for Enhanced Photoelectrochemical Water Splitting Performance. KAUST Research Repository. https://doi.org/10.25781/KAUST-07PQX
http://hdl.handle.net/10754/629521

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