Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle t...

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Bibliographic Details
Main Author: Mumthaz Muhammed, Mufasila
Other Authors: Roqan, Iman S.
Language:en
Published: 2018
Subjects:
III-Nitrides
spectroscopy
Photoluminescence
TRPL
Electroluminescence
TEM
Online Access:Mumthaz Muhammed, M. (2018). Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides. KAUST Research Repository. https://doi.org/10.25781/KAUST-G645H
http://hdl.handle.net/10754/627382

Internet

Mumthaz Muhammed, M. (2018). Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides. KAUST Research Repository. https://doi.org/10.25781/KAUST-G645H
http://hdl.handle.net/10754/627382

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