Modeling of Semiconductors and Correlated Oxides with Point Defects by First Principles Methods
Point defects in silicon, vanadium dioxide, and doped ceria are investigated by density functional theory. Defects involving vacancies and interstitial oxygen and carbon in silicon are after formed in outer space and significantly affect device performances. The screened hybrid functional by Heyd-Sc...
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| Language: | en |
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2014
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| Online Access: | http://hdl.handle.net/10754/322206 |