Nonlinear Modeling of DC Constant Power Loads with Frequency Domain Volterra Kernels
Power system designers have more creative flexibility than ever before due to improvements in power electronics technology. The invention of the silicon (Si) insulated gate bipolar transistor (IGBT) in the 1980s was a major improvement over commonly used Si MOSFETs, for higher power applica...
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| Format: | Others |
| Language: | English English |
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Florida State University
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| Online Access: | http://purl.flvc.org/fsu/fd/FSU_migr_etd-9206 |