Gallium Arsenide Mesfet Small-Signal Modeling Using Backpropagation & RBF Neural Networks
The small-signal intrinsic ECPs (equivalent circuit parameters) of a 4x50 µm gate width, 0.25 µm gate length GaAs (gallium arsenide) MESFET (metal semiconductor field-effect transistor) were modeled versus bias (voltage and current) and temperature using backpropagation and RBF (radial basis functio...
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| Format: | Others |
| Language: | English English |
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Florida State University
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| Online Access: | http://purl.flvc.org/fsu/fd/FSU_migr_etd-3286 |