Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation.

Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation.

by Gao Yun. === "November 2002." === Thesis (Ph.D.)--Chinese University of Hong Kong, 2002. === Includes bibliographical references (p. 165-171). === Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World...

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Bibliographic Details
Other Authors: Gao, Yun.
Format: Others
Language:English
Chinese
Published: 2002
Subjects:
Thin films
Ion implantation
Precipitation (Chemistry)
Vapor-plating
Online Access:http://library.cuhk.edu.hk/record=b6073502
http://repository.lib.cuhk.edu.hk/en/item/cuhk-343260
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spelling ndltd-cuhk.edu.hk-oai-cuhk-dr-cuhk_3432602019-02-19T03:41:11Z Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation. CUHK electronic theses & dissertations collection Thin films Ion implantation Precipitation (Chemistry) Vapor-plating by Gao Yun. "November 2002." Thesis (Ph.D.)--Chinese University of Hong Kong, 2002. Includes bibliographical references (p. 165-171). Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. Mode of access: World Wide Web. Abstracts in English and Chinese. Gao, Yun. Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. 2002 Text bibliography electronic resource electronic resource remote microform microfiche cuhk:343260 http://library.cuhk.edu.hk/record=b6073502 eng chi Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) http://repository.lib.cuhk.edu.hk/en/islandora/object/cuhk%3A343260/datastream/TN/view/Formation%20and%20characterization%20of%20FeSi2%20thin%20films%20and%20precipitates%20prepared%20by%20metal%20vapor%20vacuum%20arc%20%28MEVVA%29%20ion%20implanation.jpghttp://repository.lib.cuhk.edu.hk/en/item/cuhk-343260
collection NDLTD
language English
Chinese
format Others
sources NDLTD
topic Thin films
Ion implantation
Precipitation (Chemistry)
Vapor-plating
spellingShingle Thin films
Ion implantation
Precipitation (Chemistry)
Vapor-plating
Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation.
description by Gao Yun. === "November 2002." === Thesis (Ph.D.)--Chinese University of Hong Kong, 2002. === Includes bibliographical references (p. 165-171). === Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. === Mode of access: World Wide Web. === Abstracts in English and Chinese.
author2 Gao, Yun.
author_facet Gao, Yun.
title Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation.
title_short Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation.
title_full Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation.
title_fullStr Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation.
title_full_unstemmed Formation and characterization of FeSi2 thin films and precipitates prepared by metal vapor vacuum arc (MEVVA) ion implanation.
title_sort formation and characterization of fesi2 thin films and precipitates prepared by metal vapor vacuum arc (mevva) ion implanation.
publishDate 2002
url http://library.cuhk.edu.hk/record=b6073502
http://repository.lib.cuhk.edu.hk/en/item/cuhk-343260
_version_ 1718977766680952832

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