Physical damage and damage removal on indium phosphide and gallium arsenide surfaces using low energy ions.

Physical damage and damage removal on indium phosphide and gallium arsenide surfaces using low energy ions.

Thesis (Ph.D.)--Chinese University of Hong Kong ,2001. === Includes bibliographical references. === Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. === Mode of access: World Wide Web. === Abstracts...

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Bibliographic Details
Other Authors: Zhao, Qing.
Format: Others
Language:English
Chinese
Published: 2001
Subjects:
Semiconductors > Surfaces
Indium Phosphide
Gallium arsenide semiconductors
Ion bombardment
Online Access:http://library.cuhk.edu.hk/record=b6073327
http://repository.lib.cuhk.edu.hk/en/item/cuhk-343062

Internet

http://library.cuhk.edu.hk/record=b6073327
http://repository.lib.cuhk.edu.hk/en/item/cuhk-343062

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