Alloying phenomenon of amorphous silicon and germanium double layers on silicon wafer generated by in-situ thermal pulse =: 原位熱脈衝對硅片上非晶硅鍺雙層薄膜所產生的合金現象.

• Other Authors: Yeung, Ching Chung.
• Format: Others
• Language: English; Chinese
• Published: 1998
• Subjects: Silicon alloys > Heat treatment; Germanium alloys > Heat treatment; Amorphous semiconductors
• Online Access: http://library.cuhk.edu.hk/record=b5889715; http://repository.lib.cuhk.edu.hk/en/item/cuhk-322296

by Yeung Ching Chung. === Thesis (M.Phil.)--Chinese University of Hong Kong, 1998. === Includes bibliographical references (leaves 69-71). === Text in English; abstract also in Chinese. === by Yeung Ching Chung. === Table of contents --- p.i === Chapter Chapter 1 --- Introduction === Chapter 1.1 --- General overview --- p.1 === Chapter 1.2 --- The present study --- p.3 === Chapter Chapter 2 --- Sample preparation and characterization === Chapter 2.1 --- Sample preparation === Chapter A. --- General description --- p.5 === Chapter B. --- The thermal pulse furnace --- p.7 === Chapter C. --- The substrates --- p.9 === Chapter D. --- Sample preparation --- p.10 === Chapter 2.2 --- Sample characterization === Chapter A. --- Micro Raman system --- p.11 === Chapter B. --- Rutherford backscattering spectrometry (RBS) --- p.12 === Chapter C. --- X-ray powder diffraction --- p.13 === Chapter D. --- AFM. SEM and Surface Profiler --- p.13 === Chapter Chapter 3 --- Results and discussion === Chapter 3.1 --- The surface morphology === Chapter A. --- General description --- p.15 === Chapter B. --- The as-deposited amorphous film --- p.15 === Chapter C. --- The crystalline Ge film --- p.16 === Chapter D. --- The alloy film --- p.17 === Chapter E. --- The role of a-Si layer --- p.22 === Chapter 3.2 --- The depth profile (RBS) === Chapter A. --- General description --- p.24 === Chapter B. --- Peak temperature dependence --- p.27 === Chapter C. --- Heating rate dependence --- p.30 === Chapter 3.3 --- The near surface composition measured by Raman scattering === Chapter A. --- General description --- p.33 === Chapter B. --- Peak temperature dependence --- p.43 === Chapter C. --- Heating rate dependence --- p.45 === Chapter 3.4 --- Preferred growth direction === Chapter A. --- General description --- p.47 === Chapter B. --- Peak temperature dependence --- p.48 === Chapter C. --- Heating rate dependence --- p.51 === Chapter 3.5 --- Discussion === Chapter A. --- The particle size --- p.55 === Chapter B. --- The participation of Si substrate --- p.58 === Chapter C. --- The alloy formation --- p.58 === Chapter D. --- The abnormally fast interdiffusion --- p.63 === Chapter Chapter 4 --- Conclusion --- p.65 === Appendix --- p.67 === References --- p.69