Electrodeposition of Epitaxial Metals for the Fabrication of Single Crystal Interconnects
The continued miniaturization of interconnects results in performance and reliability issues for integrated circuit (IC) chips. As the critical dimension of Cu interconnects approaches dimensions near the mean free path of the metal (39.9 nm at room temperature), a rise in resistivity is observed. T...
| Main Author: | |
|---|---|
| Language: | English |
| Published: |
2021
|
| Subjects: | |
| Online Access: | https://doi.org/10.7916/d8-ngf1-ns45 |