III-V Semiconductor Materials Grown by Molecular Beam Epitaxy for Infrared and High-Speed Transistor Applications
Semiconductor devices based on III-V materials have been the focus of intense research due to their superior electron mobility and favorable energy direct bandgap which are applicable in infrared wavelength range optoelectronics and high speed electronic systems. The thesis presented here consists o...
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| Language: | English |
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2016
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| Online Access: | https://doi.org/10.7916/D8J38SPJ |