Electron Microscopy Based Characterization of Resistive Switches
Random Access Memory (RRAM) has emerged as a leading candidate for nonvolatile memory storage. RRAM devices typically consist of a metal/insulator/metal (MIM) structure and exhibit switching of the device resistivity state (low-to-high, highto- low) by application of electrical bias. It is now widel...
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| Format: | Others |
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Research Showcase @ CMU
2016
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| Online Access: | http://repository.cmu.edu/dissertations/701 http://repository.cmu.edu/cgi/viewcontent.cgi?article=1740&context=dissertations |