Contamination- induced Interfacial Resistance in Ohmic Microswitch Contacts
Ohmic nanoswitches have been recently regarded to complement transistors in applications where electrical current leakage is becoming a problem. Although the solid state metal oxide silicon field effect transistor (MOSFET) has fueled a global technology revolution, it is now reaching its performance...
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| Format: | Others |
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Research Showcase @ CMU
2014
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| Online Access: | http://repository.cmu.edu/dissertations/448 http://repository.cmu.edu/cgi/viewcontent.cgi?article=1448&context=dissertations |