High Aspect Ratio Lithographic Imaging at Ultra-high Numerical Apertures: Evanescent Interference Lithography with Resonant Reflector Underlayers
A near-field technique known as evanescent interferometric lithography allows for high resolution imaging. However its primary limitation is that the image exponentially decays within the photoresist due to physical limits. This thesis aims to overcome this limitation and presents a method to consid...
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Language: | en |
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University of Canterbury. Electrical and Computer Engineering
2012
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Online Access: | http://hdl.handle.net/10092/6935 |