Influence of ion energy on the reactive ion etching induced optical damage and annealing of gallium nitride
Photoluminescence (PL) has been successfully applied to study the optical properties of GaN. The PL results of the a-GaN samples made by the University of Victoria Wellington and poly-GaN samples made by the University of Canterbury have been able to give feedback to the preparation stage in order t...
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| Language: | en |
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University of Canterbury. Physics
2011
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| Online Access: | http://hdl.handle.net/10092/5706 |