Studies of a group III nitrides thin film growth
This thesis examines the nanoscale morphology evolution during AlN and InN thin film growth. We used synchrotron-based real-time grazing-incidence small-angle X-ray scattering (GISAXS), in order to study the plasma-assisted atomic layer epitaxy (ALEp) process. The substrate for deposition was single...
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| Language: | en_US |
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2020
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| Online Access: | https://hdl.handle.net/2144/40709 |