The effect of interface layers and doping on the multiferroic properties of bismuth titanate oxide thin films on silicon
For the development of magnetoelectric memory devices, the development of artificial magnetoelectric materials is necessary. Previous work in the field had focused on the multiferroic properties of this material in bulk form, however, for a practical device, a thin film investigation is needed. This...
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Aston University
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.767418 |