Large scale growth of MoS2 monolayers by low pressure chemical vapor deposition
Monolayers of molybdenum disulphide MoS2, a two dimensional (2D) semiconductor with a direct band gap of 1.9 eV, have been proposed as a candidate for next generation nanoscale electronic and opto-electronic devices. Controlled synthesis of MoS2 monolayers is critically important since the thickness...
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University of York
2018
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.745789 |