MM-wave frequencies GaN-on-Si HEMTs and MMIC technology development
Gallium Nitride (GaN)-based High Electron Mobility Transistors (HEMTs) grown on Silicon (Si) substrates technology is emerging as one of the most promising candidates for cost effective, high-power, high-frequency Integrated Circuit (IC) applications; operating at Microwave and Millimetre (mm)-wave...
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University of Glasgow
2018
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.744085 |