Hall potential mapping of conducting ferroelectric domain walls

The phenomenon of distinct conductivity at certain ferroelectric domain walls has the potential to revolutionise nanoelectronics. Complete control over their local carrier properties would allow two-dimensional analogues of semiconducting devices to be dynamically written, effectively supplanting mo...

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Bibliographic Details
Main Author: Campbell, Michael
Other Authors: Gregg, John ; Kumar, Amit
Published: Queen's University Belfast 2018
Subjects:
500
Online Access:https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.741078