Hall potential mapping of conducting ferroelectric domain walls
The phenomenon of distinct conductivity at certain ferroelectric domain walls has the potential to revolutionise nanoelectronics. Complete control over their local carrier properties would allow two-dimensional analogues of semiconducting devices to be dynamically written, effectively supplanting mo...
Main Author: | |
---|---|
Other Authors: | |
Published: |
Queen's University Belfast
2018
|
Subjects: | |
Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.741078 |