Use of single event upsets in dynamic random access memories as the basis for a position sensitive radiation detector
Heavy charged particle induced soft errors in semiconductor memory devices have been a field failure problem for the manufacturers and the users of microelectronic systems in recent years, but these did not become significant until the introduction of 16k and 64k dynamic Random Access Memories (dRAM...
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University of Surrey
1994
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.731041 |