Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing
Over the last few years, the non-volatile memories (NVM) have been dominating the research of the storage elements. The resistance random-access memory (RRAM) and the memristor that employs the resistive switching (RS) mechanism appear to be potential candidates for NVM. Among the RS materials that...
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University of Nottingham
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.724773 |