Simulation of total ionizing dose and random dopant fluctuations in sub-100 nm transistor nodes
Finite Elements Method simulations of Total Ionizing Dose in two state-of-the-art transistor nodes are presented: The 45 nm Partially-Depleted Silicon-on-Insulator MOSFET and the 22 nm bulk FinFET. A systematic method has been developed to study charge trapping in field isolation oxides using the si...
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University of Southampton
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.714605 |