Interference lithography with extreme ultraviolet light
In photolithography, increasing pattern density is a key issue for development of semiconductor devices. Extreme ultraviolet (EUV) radiation is the next generation light source for overcoming the resolution limit of conventional photolithography in order to obtain nanostructures of higher density. I...
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University of Southampton
2016
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.714558 |