A statistical study of time dependent reliability degradation of nanoscale MOSFET devices
Charge trapping at the channel interface is a fundamental issue that adversely affects the reliability of metal-oxide semiconductor field effect transistor (MOSFET) devices. This effect represents a new source of statistical variability as these devices enter the nano-scale era. Recently, charge tra...
| Main Author: | |
|---|---|
| Published: |
University of Glasgow
2017
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.712638 |