MOCVD growth of novel GaN materials on silicon substrates
This work studies growth of two major kinds of semi-polar GaN including (11-22) and (20-21) GaN on novel designed silicon (Si) substrates and growth of GaN nanowires (NWs) on planar Si substrates both by means of metal organic chemical vapour deposition (MOCVD). In principle, semi-polar GaN cannot b...
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University of Sheffield
2017
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.701779 |