Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE
This thesis describes the growth and characterisation of gallium nitride, indium nitride and indium gallium nitride semiconductors primarily carried out using a novel growth technique called Anion Modulation Epitaxy (AME) and also plasma-assisted MBE (PA-MBE). Characterisation was typically performe...
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University of Nottingham
2015
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.682650 |