Reliability limitations due to high electric fields of AIGaN/GaN high electron mobility transistors and novel device designs
This work investigates the impact of electronic trapping on AIGaN/GaN high electron mobility transistor (HEMT) degradation, particularly through the analysis of electric field strength in devices. The demand for ever increasing power capabilities in semiconductor microwave and power switching applic...
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University of Bristol
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.680374 |