Characterisation of molecular nitrogen implanted silicon for multiple thicknesses of gate oxide in a 0.5μm CMOS process
The continuing scaling of CMOS devices for performance advantages has resulted in an accompanying thinning of the gate oxide insulator and an increase in the level of hot carrier effects for a fixed power supply voltage. Nitrogen incorporated into the gate oxide through the nitridation of silicon ox...
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University of Edinburgh
1996
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.661050 |