The electronic passivation properties of silicon nano-islands at cleavage-induced defects of GaAs (110) : a scanning tunnelling microscopy and spectroscopy study
Using the techniques of scanning tunnelling microscopy and spectroscopy (STM/STS), the structural and electrical properties of silicon on clean cleaved GaAs(110) surfaces were investigated on a nano-meter scale. This work was focused on the effect of cleaving-induced defects on GaAs(110) surface, th...
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Swansea University
2000
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.639173 |